Formation Dynamics of BH and GaH‐Pairs in Crystalline Silicon During Dark Annealing

In crystalline silicon, atomic hydrogen released from dimers forms acceptor–hydrogen pairs during annealing in the dark at elevated temperatures. this study, formation of boron–hydrogen (BH) and gallium–hydrogen (GaH) 1 Ω cm silicon is investigated temperatures ranging 140 to 220 °C. Acceptor–hydrogen concentrations low 10 14 − 3 range are quantified by means highly sensitive resistance measurements. GaH generally found form faster than BH pairs. Arrhenius analysis shows a difference activation energy (BH: 1.20 eV, GaH: 1.04 eV) while trial frequency same ( ≈ 4 × 8 s ).